BSS64.PDF

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11068845 UNPDF
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BSS64
NPN high voltage transistor
Product specification
Supersedes data of 1997 Mar 04
File under Discrete Semiconductors, SC04
1997 Sep 04
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Philips Semiconductors
Product specification
NPN high voltage transistor
BSS64
FEATURES
PINNING
·
Low current (max. 100 mA)
PIN
DESCRIPTION
·
High voltage (max. 80 V).
1
base
2
emitter
APPLICATIONS
3
collector
·
High-voltage general purpose and switching
applications
·
Intended for application in thick and thin-film circuits.
handbook, halfpage
3
3
DESCRIPTION
1
NPN transistor in a SOT23 plastic package.
PNP complement: BSS63.
2
1
2
MARKING
Top view
MAM255
TYPE NUMBER
MARKING CODE
Fig.1 Simplified outline (SOT23) and symbol.
BSS64
AMp
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V CBO
collector-base voltage
open emitter
-
-
120
V
V CEO
collector-emitter voltage
open base
-
-
80
V
I CM
peak collector current
-
-
250
mA
P tot
total power dissipation
T amb £
25
°
C
-
-
250
mW
h FE
DC current gain
I C = 10 mA; V CE = 1 V
20
80
-
f T
transition frequency
I C = 4 mA; V CE = 10 V; f = 100 MHz
60
-
-
MHz
1997 Sep 04
2
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Philips Semiconductors
Product specification
NPN high voltage transistor
BSS64
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
120
V
V CEO
collector-emitter voltage
open base
-
80
V
V EBO
emitter-base voltage
open collector
-
5
V
I C
collector current (DC)
-
100
mA
I CM
peak collector current
-
250
mA
I BM
peak base current
-
100
mA
P tot
total power dissipation
T amb £ 25 ° C
-
250
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient note 1
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T j =25
C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =90V
-
-
100
nA
I E = 0; V CB =90V; T j = 150
°
C
-
-
50
m
A
I EBO
emitter cut-off current
I C = 0; V EB =5V
-
0.5
200
nA
h FE
DC current gain
I C = 1 mA; V CE =1V
-
60
-
I C = 10 mA; V CE = 1 V
20
80
-
I C = 20 mA; V CE =1V
-
55
-
V CEsat
collector-emitter saturation voltage I C = 4 mA; I B = 400
m
A
-
-
150
mV
I C = 50 mA; I B =15mA
-
-
200
mV
C c
collector capacitance
I E =i e = 0; V CB = 10 V; f = 1 MHz
-
3
-
pF
f T
transition frequency
I C = 4 mA; V CE = 10 V; f = 100 MHz 60
100
-
MHz
1997 Sep 04
3
°
11068845.030.png
Philips Semiconductors
Product specification
NPN high voltage transistor
BSS64
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H E
v M A
3
Q
A
A 1
1
2
c
e 1
b p
w M
B
L p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A 1
max.
b p
c
D
E
e
e 1
H E
L p
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT23
97-02-28
1997 Sep 04
4
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Philips Semiconductors
Product specification
NPN high voltage transistor
BSS64
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 04
5
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