BUK474-200A-B_2.pdf

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Philips Semiconductors
Product specification
Isolated version of BUK454-200A/B
BUK474-200A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
SYMBOL PARAMETER
MAX.
MAX.
UNIT
field-effect power transistor in a
plastic full-pack envelope. The
BUK474
-200A -200B
device is intended for use in Switched
V DS
Drain-source voltage
200
200
V
Mode Power Supplies (SMPS),
I D
Drain current (DC)
5.3
4.7
A
motor control, welding, DC/DC and
P tot
Total power dissipation
25
25
W
AC/DC converters, and in general
R DS(ON)
Drain-source on-state
0.4
0.5
W
purpose switching applications.
resistance
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
d
1
gate
2
drain
3
source
g
case isolated
12 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V DS
Drain-source voltage
-
-
200
V
V DGR
Drain-gate voltage
R GS = 20 k
W
-
200
V
±
V GS
Gate-source voltage
-
-
30
V
-200A
-200B
I D
Drain current (DC)
T hs = 25 ˚C
-
5.3
4.7
A
I D
Drain current (DC)
T hs = 100 ˚C
-
3.3
3.0
A
I DM
Drain current (pulse peak value) T hs = 25 ˚C
-
21
19
A
P tot
Total power dissipation
T hs = 25 ˚C
-
25
W
T stg
Storage temperature
-
- 55
150
˚C
T j
Junction temperature
-
-
150
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
Thermal resistance junction to with heatsink compound
-
-
5
K/W
heatsink
R th j-a
Thermal resistance junction to
-
55
-
K/W
ambient
April 1998
1
Rev 1.100
PowerMOS transistor
22889722.010.png 22889722.011.png 22889722.012.png 22889722.013.png
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-200A/B
STATIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V (BR)DSS
Drain-source breakdown
V GS = 0 V; I D = 0.25 mA
200
-
-
V
voltage
V GS(TO)
Gate threshold voltage
V DS = V GS ; I D = 1 mA
2.1
3.0
4.0
V
I DSS
Zero gate voltage drain current V DS = 200 V; V GS = 0 V; T j = 25 ˚C
-
1
10
A
m
I DSS
Zero gate voltage drain current V DS = 200 V; V GS = 0 V; T j =125 ˚C
-
0.1
1.0
mA
I GSS
Gate source leakage current
V GS =
±
30 V; V DS = 0 V
-
10
100
nA
R DS(ON)
Drain-source on-state
V GS = 10 V;
BUK474-200A
-
0.35
0.4
W
resistance
I D = 3.5 A
BUK474-200B
-
0.4
0.5
W
DYNAMIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
g fs
Forward transconductance
V DS = 25 V; I D = 3.5 A
3.5
5.0
-
S
C iss
Input capacitance
V GS = 0 V; V DS = 25 V; f = 1 MHz
-
700
850
pF
C oss
Output capacitance
-
100
160
pF
C rss
Feedback capacitance
-
50
80
pF
t d on
Turn-on delay time
V DD = 30 V; I D = 2.9 A;
-
12
20
ns
t r
Turn-on rise time
V GS = 10 V; R GS = 50
W
;
-
45
70
ns
t d off
Turn-off delay time
R gen = 50
W
-
80
120
ns
t f
Turn-off fall time
-
40
60
ns
L d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
£
65% ; clean and dustfree
C isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I DR
Continuous reverse drain
-
-
-
5.3
A
current
I DRM
Pulsed reverse drain current
-
-
-
21
A
V SD
Diode forward voltage
I F = 5.3 A ; V GS = 0 V
-
1.1
1.3
V
t rr
Reverse recovery time
I F = 5.3 A; -dI F /dt = 100 A/
m
s;
-
150
-
ns
Q rr
Reverse recovery charge
V GS = 0 V; V R = 30 V
-
0.9
-
m
C
April 1998
2
Rev 1.100
22889722.001.png
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-200A/B
AVALANCHE LIMITING VALUE
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
W DSS
Drain-source non-repetitive
I D = 9 A ; V DD
£
100 V ;
-
-
50
mJ
unclamped inductive turn-off
V GS = 10 V ; R GS = 50
W
energy
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
100
ID / A
BUK444-200A,B
with heatsink compound
A
B
tp = 10 us
10
100 us
1 ms
1
DC
10 ms
100 ms
0.1
0
20
40
60
80
100 120 140
1
10
100
1000
10000
Ths / C
VDS / V
Fig.1. Normalised power dissipation.
PD% = 100
×
P D /P D 25 ˚C = f(T hs )
Fig.3. Safe operating area. T hs = 25 ˚C
I D & I DM = f(V DS ); I DM single pulse; parameter t p
ID%
Normalised Current Derating
Zth / (K/W)
BUKx44-lv
10
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
D =
0.5
1
0.2
0.1
0.05
0.02
0.1
P
t p
D =
T
0
T
t
0.01
0
20
40
60
80
100 120 140
1E-07
1E-05
1E-03
1E-01
1E+01
Ths / C
t / s
Fig.2. Normalised continuous drain current.
ID% = 100
×
I D /I D 25 ˚C = f(T hs ); conditions: V GS
³
10 V
Fig.4. Transient thermal impedance.
Z th j-hs = f(t); parameter D = t p /T
April 1998
3
Rev 1.100
D
t p
22889722.002.png 22889722.003.png 22889722.004.png
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-200A/B
20
ID / A
VGS / V =
BUK444-200A
6
gfs / S
BUK454-200A
20
10
8
5
15
7
4
10
3
6
2
5
5
1
0
4
0
0
2
4
6
8 10 12 14 16 18 20
0
2
4
6
8 10 12 14 16 18 20
VDS / V
ID / A
Fig.5. Typical output characteristics, T j = 25 ˚C.
I D = f(V DS ); parameter V GS
Fig.8. Typical transconductance, T j = 25 ˚C.
g fs = f(I D ); conditions: V DS = 25 V
RDS(ON) / Ohm
BUK454-200A
a
Normalised RDS(ON) = f(Tj)
1.5
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
4.5 5
5.5 6
6.5
7
VGS / V =
7.5
1.0
8
10
0.5
20
0
0
2
4
6
8 10 12 14 16 18 20
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
ID / A
Fig.6. Typical on-state resistance, T j = 25 ˚C.
R DS(ON) = f(I D ); parameter V GS
Fig.9. Normalised drain-source on-state resistance.
a = R DS(ON) /R DS(ON)25 ˚C = f(T j ); I D = 3.5 A; V GS = 10 V
ID / A
BUK454-200A
VGS(TO) / V
20
max.
4
Tj / C =
25
150
15
typ.
3
10
min.
2
5
1
0
0
0
2
4
6
8
10
-60 -40 -20 0
20 40 60 80 100 120 140
Tj / C
VGS / V
Fig.7. Typical transfer characteristics.
I D = f(V GS ) ; conditions: V DS = 25 V; parameter T j
Fig.10. Gate threshold voltage.
V GS(TO) = f(T j ); conditions: I D = 1 mA; V DS = V GS
April 1998
4
Rev 1.100
22889722.005.png 22889722.006.png 22889722.007.png 22889722.008.png
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-200A/B
1E-01
ID / A
SUB-THRESHOLD CONDUCTION
20
IF / A
BUK454-200A
1E-02
15
1E-03
2 %
typ
98 %
10
1E-04
Tj / C = 150
1E-05
5
25
1E-06
0
0
1
2
3
4
0
1
2
VGS / V
VSDS / V
Fig.11. Sub-threshold drain current.
I D = f(V GS) ; conditions: T j = 25 ˚C; V DS = V GS
Fig.14. Typical reverse diode current.
I F = f(V SDS ); conditions: V GS = 0 V; parameter T j
10000
C / pF
BUK4y4-200
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
1000
Ciss
100
Coss
Crss
10
0
20
40
20
40
60
80
100
120
140
VDS / V
Ths / C
Fig.12. Typical capacitances, C iss , C oss , C rss .
C = f(V DS ); conditions: V GS = 0 V; f = 1 MHz
Fig.15. Normalised avalanche energy rating.
W DSS % = f(T hs ); conditions: I D = 9 A
12
VGS / V
BUK454-200
+
VDD
VDS / V =40
10
L
8
160
VDS
-
6
VGS
-ID/10 0
4
0
T.U.T.
2
RGS
R 01
shunt
0
0
4
8
12
16
20
24
28
QG / nC
Fig.16. Avalanche energy test circuit.
Fig.13. Typical turn-on gate-charge characteristics.
V GS = f(Q G ); conditions: I D = 9 A; parameter V DS
W DSS = 0.5 × LI 2
× BV DSS /( BV DSS - V DD )
April 1998
5
Rev 1.100
22889722.009.png

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