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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency
diode, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
V CESM
Collector-emitter voltage peak value
V BE = 0 V
-
1500
V
V CEO
Collector-emitter voltage (open base)
-
700
V
I C
Collector current (DC)
-
8
A
I CM
Collector current peak value
-
15
A
P tot
Total power dissipation
T hs
£
25 ˚C
-
45
W
V CEsat
Collector-emitter saturation voltage
I C = 4.5 A; I B = 1.6 A
-
1.0
V
I Csat
Collector saturation current
f = 16kHz
4.5
-
A
V F
Diode forward voltage
I F = 4.5 A
1.6
2.0
V
t f
Fall time
I Csat = 4.5 A; f = 16kHz
0.7
-
m
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
c
1
base
2
collector
b
3
emitter
case isolated
123
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V CESM
Collector-emitter voltage peak value
V BE = 0 V
-
1500
V
V CEO
Collector-emitter voltage (open base)
-
700
V
I C
Collector current (DC)
-
8
A
I CM
Collector current peak value
-
15
A
I B
Base current (DC)
-
4
A
I BM
Base current peak value
-
6
A
P tot
Total power dissipation
T hs
£
25 ˚C
-
45
W
T stg
Storage temperature
-65
150
˚C
T j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
R th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R th j-a
Junction to ambient
in free air
35
-
K/W
July 1998
1
Rev 1.200
s
22890088.014.png 22890088.015.png 22890088.016.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
Repetitive peak voltage from all R.H.
£
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CES
Collector cut-off current 1
V BE = 0 V; V CE = V CESMmax
-
-
1.0
mA
I CES
V BE = 0 V; V CE = V CESMmax ;
-
-
2.0
mA
T j = 125 ˚C
I EBO
Emitter cut off current
V EB = 6.0 V; I C = 0 A
-
-
10
mA
V CEOsust
Collector-emitter sustaining voltage I B = 0 A; I C = 100 mA;
700
-
-
V
L = 25 mH
V CEsat
Collector-emitter saturation voltages I C = 4.5 A; I B = 1.6 A
-
-
1.0
V
V BEsat
Base-emitter saturation voltage
I C = 4.5 A; I B = 1.6 A
-
-
1.3
V
h FE
DC current gain
I C = 100 mA; V CE = 5 V
6
13
30
V F
Diode forward voltage
I F = 4.5 A
-
1.6
2.0
V
DYNAMIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
f T
Transition frequency at f = 5 MHz
I C = 0.1 A;V CE = 5 V
7
-
MHz
C C
Collector capacitance at f = 1MHz
V CB = 10 V
125
-
pF
Switching times (16 kHz line
I Csat = 4.5 A;L c 1 mH;C fb = 4 nF
deflection circuit)
I B(end) = 1.4 A; L B = 6
m
H; -V BB = -4 V;
-I BM = 2.25 A
t s
Turn-off storage time
6.5
-
m
t f
Turn-off fall time
0.7
-
m
1 Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.200
s
s
22890088.017.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DX
TRANSISTOR
DIODE
ICsat
+ 150 v nominal
adjust for ICsat
IC
t
IB
IBend
1mH
t
20us
26us
64us
D.U.T.
IBend
LB
12nF
VCE
t
-VBB
Fig.1. Switching times waveforms.
Fig.3. Switching times test circuit
ICsat
90 %
IC
100
h FE
BU508AD
10 %
tf
t
ts
IB
IBend
10
t
1
0.1
1
10
- IBM
IC/A
Fig.2. Switching times definitions.
Fig.4. Typical DC current gain. h FE = f (I C )
parameter V CE
July 1998
3
Rev 1.200
22890088.001.png 22890088.002.png 22890088.003.png 22890088.004.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DX
1
VCESAT / V
BU508AD
VCESAT/V
BU508AD
10
0.9
0.8
0.7
0.6
0.5
1
0.4
IC = 6A
0.3
0.2
IC = 4.5A
0.1
IC = 3A
0
0.1
1
10
0.1
0.1
1
10
IC / A
IB/A
Fig.5. Typical collector-emitter saturation voltage.
V CE sat = f (I C ); parameter I C /I B
Fig.7. Typical collector-emitter saturation voltage.
V CE sat = f (I B ); parameter I C
V BESAT / V
BU508AD
PD%
Normalised Power Derating
1.4
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1.2
IC = 6A
1
IC = 4.5A
IC = 3A
0.8
0
20
40
60
80
100 120 140
0.6
0
1
2
3
IB / A
4
Ths / C
Fig.6. Typical base-emitter saturation voltage.
V BE sat = f (I B ); parameter I C
Fig.8. Normalised power dissipation.
PD% = 100
P D /P D 25˚C = f (T hs )
July 1998
4
Rev 1.200
×
22890088.005.png 22890088.006.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DX
Zth K/W
bu508ax
IC / A
10
100
1
0.5
0.2
0.1
0.05
0.02
= 0.01
ICM max
tp =
0.1
10
IC max
t p
II
10 us
0.01
P
t p
D =
D
T
0
T
t
Ptot max
0.001
1.0E-07
1.0E-05
1E-03
1.0E-01
1.0E+1
1
t / s
100 us
Fig.9. Transient thermal impedance.
Z th j-hs = f(t); parameter D = t p /T
1 ms
I
IC / A
100
0.1
10 ms
= 0.01
DC
ICM max
tp =
10
IC max
0.01
1
10
100
1000
II
10 us
VCE / V
Ptot max
Fig.11. Forward bias safe operating area. T hs = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
1
100 us
NB: Mounted without heatsink compound and
30
5 newton force on the centre of
the envelope.
±
I
1 ms
0.1
10 ms
DC
0.01
1
10
100
1000
VCE / V
Fig.10. Forward bias safe operating area. T hs = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30
±
July 1998
5
Rev 1.200
5 newton force on the centre of
the envelope.
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