TIC126.PDF

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TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
Copyright © 1997, Power Innovations Limited, UK
APRIL 1971 - REVISED MARCH 1997
l 12 A Continuous On-State Current
l 100 A Surge-Current
TO-220 PACKAGE
(TOP VIEW)
l Glass Passivated Wafer
l 400 V to 800 V Off-State Voltage
K
1
A
2
l Max I GT of 20 mA
G
3
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC126D
TIC126M
TIC126S
TIC126N
V DRM
400
600
700
800
V
Repetitive peak reverse voltage
TIC126D
TIC126M
TIC126S
TIC126N
V RRM
400
600
700
800
V
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
I T(RMS)
12
A
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
I T(AV)
7.5
A
Surge on-state current (see Note 4)
I TM
100
A
Peak positive gate current (pulse width £ 300 m s)
I GM
3
A
Peak gate power dissipation (pulse width £ 300 m s)
P GM
5
W
Average gate power dissipation (see Note 5)
P G(AV)
1
W
Operating case temperature range
T C
-40 to +110
°C
Storage temperature range
T stg
-40 to +125
°C
Lead temperature 1.6 mm from case for 10 seconds
T L
230
°C
NOTES: 1. These values apply when the gate-cathode resistance R GK = 1 k W .
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
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TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I DRM
Repetitive peak
off-state current
V D = rated V DRM
R GK = 1 k W
T C = 110°C
2
mA
I RRM
Repetitive peak
reverse current
V R = rated V RRM
I G = 0
T C = 110°C
2
mA
I GT
Gate trigger current
V AA = 6 V
R L = 100 W
t p(g) ‡ 20 m s
5
20
mA
V AA = 6 V
t p(g) ‡ 20 µs
R L = 100 W
R GK = 1 k W
T C = - 40°C
2.5
V GT
Gate trigger voltage
V AA = 6 V
t p(g) ‡ 20 µs
R L = 100 W
R GK = 1 k W
0.8
1.5
V
V AA = 6 V
t p(g) ‡ 20 µs
R L = 100 W
R GK = 1 k W
T C = 110°C
0.2
V AA = 6 V
Initiating I T = 100 mA
R GK = 1 k W
T C = - 40°C
70
I H
Holding current
mA
V AA = 6 V
Initiating I T = 100 mA
R GK = 1 k W
40
V TM
Peak on-state
voltage
I TM = 12 A
(see Note 6)
1.4
V
dv/dt
Critical rate of rise of
off-state voltage
V D = rated V D
I G = 0
T C = 110°C
100
V/µs
NOTE 6: This parameter must be measured using pulse techniques, t p = 300 µs, duty cycle £ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R q JC
Junction to case thermal resistance
2.4
°C/W
R q JA
Junction to free air thermal resistance
62.5
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t gt
Gate-controlled
turn-on time
I T = 5 A
I G = 200 mA
See Figure 1
0.8
µs
t q
Circuit-commutated
turn-off time
I T = 5 A
I RM = 10 A
See Figure 2
11
µs
PRODUCT INFORMATION
2
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TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
30 V
6 W
I T
V G
V A
10%
R G
DUT
t gt
G
V G
I G
V A
90%
PMC1AA
Figure 1. Gate-controlled turn-on time
30 V
6 W
0.1 m F
to 0.5 m F
R2
NOTES: A. Resistor R1 is adjusted for the specified value
of I RM .
B. Resistor R2 value is 30/I H , where I H is the
holding current value of thyristor TH1.
I A
R1
C. Thyristor TH1 is the same device type as the
DUT.
V A
synchronised to produce an on-state anode
current waveform with the following
DUT
TH1
R G
R G
characteristics:
t P = 50 µs to 300 µs
G1
V K
(I RM Monitor)
G2
duty cycle = 1%
V G1
V G2
I G
I G
E. Pulse Generators, G1 and G2, have output
0.1 W
pulse amplitude, V G , of ‡ 20 V and duration of
G2 t P Synchronisation
V G1
V G2
I T
I A
t P
0
I RM
V A
V T
0
t q
PMC1AB
Figure 2. Circuit-commutated turn-off time
PRODUCT INFORMATION
3
D. Pulse Generators, G1 and G2, are
10 µs to 20 µs.
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TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
AVERAGE ON-STATE CURRENT
MAX CONTINUOUS ANODE POWER DISSIPATED
vs
DERATING CURVE
CONTINUOUS ON-STATE CURRENT
16
TI03AE
100
TI03AF
14
T J = 110°C
Continuous DC
12
10
10
8
F = 180º
6
1
4
0°
180°
F
2
Conduction
Angle
0
0·1
30
40
50
60
70
80
90 100 110
0·1
1
10
100
T C - Case Temperature - °C
I T - Continuous On-State Current - A
Figure 3.
Figure 4.
SURGE ON-STATE CURRENT
TRANSIENT THERMAL RESISTANCE
vs
vs
CYCLES OF CURRENT DURATION
CYCLES OF CURRENT DURATION
100
TI03AG
100
TI03AH
10
10
T C £ 80°C
No Prior Device Conduction
Gate Control Guaranteed
1
1
10
100
1
1
10
100
Consecutive 50 Hz Half-Sine-Wave Cycles
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 5.
Figure 6.
PRODUCT INFORMATION
4
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TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
GATE TRIGGER VOLTAGE
vs
vs
CASE TEMPERATURE
CASE TEMPERATURE
TC03AA
TC03AB
10
1
V AA = 6 V
R L = 1 k W
t p(g) ‡ 20 µs
0·8
0·6
0·4
0·2
V AA = 6 V
R L = 100 W
R GK = 1 k W
t p(g) ‡ 20 µs
1
0
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
T C - Case Temperature - °C
T C - Case Temperature - °C
Figure 7.
Figure 8.
GATE FORWARD VOLTAGE
vs
HOLDING CURRENT
vs
GATE FORWARD CURRENT
CASE TEMPERATURE
TC03AC
TC03AD
10
I A = 0
T C = 25 °C
t p = 300 µs
Duty Cycle £ 2 %
V AA = 6 V
R GK = 1 k W
Initiating I T = 100 mA
1
10
0·1
0·01
0·1
1
10
100
1000
1
-50
-25
0
25
50
75
100
125
I GF - Gate Forward Current - mA
T C - Case Temperature - °C
Figure 9.
Figure 10.
PRODUCT INFORMATION
5
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