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N-channel 200V - 0.10 Ohm -18A- DPAK/TO-220/TO-220FP - Low gate charge STripFET Power MOSFET
STD20NF20
STF20NF20 - STP20NF20
N-channel 200V - 0.10
-18A- DPAK/TO-220/TO-220FP
Low gate charge STripFET™ Power MOSFET
Ω
Features
Type
V
DSS
R
DS(on)
I
D
P
W
STD20NF20
200V <0.125
Ω
18A
90W
STF20NF20
200V <0.125
Ω
18A
25W
3
3
2
2
1
1
STP20NF20
200V <0.125
Ω
18A
90W
TO-220FP
TO-220
■
Exceptional dv/dt capability
■
Low gate charge
3
■
100% avalanche tested
1
DPAK
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters.
Internal schematic diagram
Application
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STD20NF20
20NF20
DPAK
Tape & reel
STF20NF20
20NF20
TO-220FP
Tube
STP20NF20
20NF20
TO-220
Tube
April 2007
Rev 3
1/16
www.st.com
16
Contents
STD20NF20 - STF20NF20 - STP20NF20
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
STD20NF20 - STF20NF20 - STP20NF20
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220/DPAK
TO-220FP
V
DS
Drain-source voltage (V
GS
= 0)
200
V
V
GS
Gate- source voltage
± 20
V
I
D
Drain current (continuous) at T
C
= 25°C
18
A
I
D
Drain current (continuous) at T
C
= 100°C
11
A
I
DM
(1)
Drain current (pulsed)
72
A
P
TOT
Total dissipation at T
C
= 25°C
90
25
W
Derating factor
0.72
0.2
W/°C
dv/dt
(2)
Peak diode recovery voltage slope
15
V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1s; Tc = 25°C)
--
2500
V
T
stg
Storage temperature
-55 to 150
°C
T
j
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. I
SD
< 18A, di/dt < 400A/µs, V
DD
< V
(BR)DSS
Table 2.
Thermal data
Symbol
Parameter
TO-220 DPAK TO-220FP Unit
Rthj-case
Thermal resistance junction-case max
1.38
1.38
5
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
50
(1)
62.5
°C/W
T
l
Maximum lead temperature for soldering
purpose
300
°C
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
I
AR
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
j
max)
18
A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
110
mJ
3/16
Electrical characteristics
STD20NF20 - STF20NF20 - STP20NF20
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1 mA, V
GS
= 0
200
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, T
C
= 125°C
1
10
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20V
±100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2
3
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 10 A
0.10 0.125
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g
fs
(1)
Forward
transconductance
V
DS
= 25 V
,
I
D
= 10 A
13
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
940
197
30
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
r
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 100 V, I
D
= 10 A,
R
G
= 4.7
Ω
V
GS
= 10 V
(see Figure 14)
15
30
40
10
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 160V, I
D
= 20 A,
V
GS
= 10V
(see Figure 15)
28
5.6
14.5
39
nC
nC
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
4/16
STD20NF20 - STF20NF20 - STP20NF20
Electrical characteristics
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
I
SD
I
SDM
(1)
Source-drain current
Source-drain current
(pulsed)
18
72
A
A
V
SD
(2)
Forward on voltage
I
SD
= 20 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 20 A, di/dt = 100A/µs
V
DD
= 50V, T
j
= 25°C
(see Figure 19)
155
775
10
ns
nC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 20 A, di/dt = 100A/µs
V
DD
= 50V, T
j
= 150°C
(see Figure 19)
183
1061
11.6
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
5/16
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