std20nf20.pdf

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N-channel 200V - 0.10 Ohm -18A- DPAK/TO-220/TO-220FP - Low gate charge STripFET Power MOSFET
STD20NF20
STF20NF20 - STP20NF20
N-channel 200V - 0.10
-18A- DPAK/TO-220/TO-220FP
Low gate charge STripFET™ Power MOSFET
Ω
Features
Type
V DSS R DS(on)
I D
P W
STD20NF20
200V <0.125
Ω
18A
90W
STF20NF20
200V <0.125
Ω
18A
25W
3
3
2
2
1
1
STP20NF20
200V <0.125
Ω
18A
90W
TO-220FP
TO-220
■
Exceptional dv/dt capability
■
Low gate charge
3
■
100% avalanche tested
1
DPAK
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters.
Internal schematic diagram
Application
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STD20NF20
20NF20
DPAK
Tape & reel
STF20NF20
20NF20
TO-220FP
Tube
STP20NF20
20NF20
TO-220
Tube
April 2007
Rev 3
1/16
16
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Contents
STD20NF20 - STF20NF20 - STP20NF20
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
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STD20NF20 - STF20NF20 - STP20NF20
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220/DPAK
TO-220FP
V DS
Drain-source voltage (V GS = 0)
200
V
V GS
Gate- source voltage
± 20
V
I D
Drain current (continuous) at T C = 25°C
18
A
I D
Drain current (continuous) at T C = 100°C
11
A
I DM (1)
Drain current (pulsed)
72
A
P TOT
Total dissipation at T C = 25°C
90
25
W
Derating factor
0.72
0.2
W/°C
dv/dt (2)
Peak diode recovery voltage slope
15
V/ns
V ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1s; Tc = 25°C)
--
2500
V
T stg
Storage temperature
-55 to 150
°C
T j
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. I SD < 18A, di/dt < 400A/µs, V DD < V (BR)DSS
Table 2.
Thermal data
Symbol
Parameter
TO-220 DPAK TO-220FP Unit
Rthj-case
Thermal resistance junction-case max
1.38
1.38
5
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
50 (1)
62.5
°C/W
T l
Maximum lead temperature for soldering
purpose
300
°C
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
I AR
Avalanche current, repetitive or not-
repetitive (pulse width limited by T j max)
18
A
E AS
Single pulse avalanche energy
(starting T j = 25 °C, I D = I AR , V DD = 50 V)
110
mJ
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Electrical characteristics
STD20NF20 - STF20NF20 - STP20NF20
2
Electrical characteristics
(T CASE =25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V (BR)DSS
Drain-source
breakdown voltage
I D = 1 mA, V GS = 0
200
V
I DSS
Zero gate voltage
drain current (V GS = 0)
V DS = Max rating
V DS = Max rating, T C = 125°C
1
10
µA
µA
I GSS
Gate-body leakage
current (V DS = 0)
V GS = ± 20V
±100 nA
V GS(th) Gate threshold voltage
V DS = V GS , I D = 250 µA
2
3
4
V
R DS(on)
Static drain-source on
resistance
V GS = 10V, I D = 10 A
0.10 0.125
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g fs (1)
Forward
transconductance
V DS = 25 V , I D = 10 A
13
S
C iss
C oss
C rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V DS = 25V, f = 1 MHz, V GS = 0
940
197
30
pF
pF
pF
t d(on)
t r
t d(off)
t r
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V DD = 100 V, I D = 10 A,
R G = 4.7 Ω V GS = 10 V
(see Figure 14)
15
30
40
10
ns
ns
ns
ns
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V DD = 160V, I D = 20 A,
V GS = 10V
(see Figure 15)
28
5.6
14.5
39
nC
nC
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
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STD20NF20 - STF20NF20 - STP20NF20
Electrical characteristics
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
I SD
I SDM (1)
Source-drain current
Source-drain current
(pulsed)
18
72
A
A
V SD (2)
Forward on voltage
I SD = 20 A, V GS = 0
1.6
V
t rr
Q rr
I RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I SD = 20 A, di/dt = 100A/µs
V DD = 50V, T j = 25°C
(see Figure 19)
155
775
10
ns
nC
A
t rr
Q rr
I RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I SD = 20 A, di/dt = 100A/µs
V DD = 50V, T j = 150°C
(see Figure 19)
183
1061
11.6
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
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