AO4422.pdf

(186 KB) Pobierz
323061138 UNPDF
Jan 2003
AO4422
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4422 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
V DS (V) = 30V
I D = 11A
R DS(ON) < 15m Ω (V GS = 10V)
R DS(ON) < 24m Ω (V GS = 4.5V)
D
S
D
S
D
S
D
G
D
G
SOIC-8
S
Absolute Maximum Ratings T A =25°C unless otherwise noted
Parameter
Symbol
V DS
V GS
Maximum
Units
Drain-Source Voltage
30
V
V
Gate-Source Voltage
±20
Continuous Drain
Current A
T A =25°C
T A =70°C
I D
11
9.3
50
A
Pulsed Drain Current B
I DM
T A =25°C
P D
3
2.1
-55 to 150
W
Power Dissipation
T A =70°C
Junction and Storage Temperature Range
T J , T STG
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
t ≤ 10s
R θ JA
31
40
°C/W
°C/W
Maximum Junction-to-Ambient A
Steady-State
59
75
Maximum Junction-to-Lead C
Steady-State
R θ JL
16
24
°C/W
Alpha & Omega Semiconductor, Ltd.
323061138.016.png 323061138.017.png 323061138.018.png
AO4422
Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BV DSS
Drain-Source Breakdown Voltage
I D =250 µ A, V GS =0V
30
V
I DSS
Zero Gate Voltage Drain Current
V DS =24V, V GS =0V
1
µ A
T J =55°C
5
I GSS
Gate-Body leakage current
V DS =0V, V GS = ±20V
100
nA
V GS(th)
Gate Threshold Voltage
V DS =V GS I D =250 µ A
1
1.8
3
V
I D(ON)
On state drain current
V GS =4.5V, V DS =5V
V GS =10V, I D =11A
40
A
12.6
15
m Ω
R DS(ON)
Static Drain-Source On-Resistance
T J =125°C
16.8
21
V GS =4.5V, I D =10A
19.6
24
m Ω
g FS
Forward Transconductance
Diode Forward Voltage
V DS =5V, I D =11A
25
S
V SD
I S =1A,V GS =0V
0.75
1
V
I S
Maximum Body-Diode Continuous Current
4.3
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
Output Capacitance
1040
pF
C oss
V GS =0V, V DS =15V, f=1MHz
180
pF
C rss
Reverse Transfer Capacitance
110
pF
R g
Gate resistance
V GS =0V, V DS =0V, f=1MHz
0.7
Ω
SWITCHING PARAMETERS
Q g (10V)
Total Gate Charge
19.8
nC
Q g (4.5V)
Total Gate Charge
Gate Source Charge
V GS =10V, V DS =15V, I D =11A
9.8
nC
Q gs
2.5
nC
Q gd
Gate Drain Charge
3.5
nC
t D(on)
Turn-On DelayTime
4.5
ns
t r
Turn-On Rise Time
Turn-Off DelayTime
V GS =10V, V DS =15V, R L =1.35 Ω ,
R GEN =3 Ω
3.9
ns
t D(off)
17.4
ns
t f
Turn-Off Fall Time
3.2
ns
t rr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I F =11A, dI/dt=100A/ µ s
I F =11A, dI/dt=100A/ µ s
17.5
ns
Q rr
7.6
nC
A: The value of R θ JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θ JA is the sum of the thermal impedence from junction to lead R θ JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µ s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
323061138.019.png
AO4422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
4V
20
25
10V
16
V DS =5V
4.5V
20
3.5V
12
15
125°C
8
10
V GS =3V
25°C
5
4
0
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
V DS (Volts)
Fig 1: On-Region Characteristics
V GS (Volts)
Figure 2: Transfer Characteristics
24
1.6
22
V GS =10V
I D =10A
V GS =4.5V
1.4
20
18
V GS =4.5V
1.2
16
14
V GS =10V
1
12
10
0.8
0
5
10
15
20
0
25
50
75
100 125
150 175
I D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
1.0E+01
50
1.0E+00
I D =10A
1.0E-01
40
125°C
1.0E-02
30
25°C
125°C
1.0E-03
20
25°C
1.0E-04
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
V SD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
323061138.001.png 323061138.002.png 323061138.003.png 323061138.004.png 323061138.005.png 323061138.006.png 323061138.007.png 323061138.008.png 323061138.009.png 323061138.010.png 323061138.011.png 323061138.012.png
AO4422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
V DS =15V
I D =11A
8
1250
C iss
6
1000
750
4
500
C oss
2
250
0
0
C rss
0
4
8
12
16
20
0
5
10
15
20
25
30
Q g (nC)
Figure 7: Gate-Charge Characteristics
V DS (Volts)
Figure 8: Capacitance Characteristics
100.0
50
T J(Max) =150°C
T A =25°C
R DS(ON)
limited
100 µ s
40
10 µ s
1ms
10.0
10ms
30
0.1s
20
1.0
1s
10s
T J(Max) =150°C
T A =25°C
10
DC
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
V DS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=T on /T
T J,PK =T A +P DM .Z θ JA .R θ JA
R θ JA =40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P D
Single Pulse
T on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
323061138.013.png 323061138.014.png 323061138.015.png
This datasheet has been downloaded from:
Datasheets for electronic components.

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin